Atomic and electronic structures of the gan (100, 110, 111) surfaces (1996)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Publisher place: São Paulo
- Date published: 1996
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
-
ABNT
ALVES, J L A et al. Atomic and electronic structures of the gan (100, 110, 111) surfaces. 1996, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1996. . Acesso em: 18 abr. 2024. -
APA
Alves, J. L. A., Alves, H. W. L., Oliveira, C., Valadao, R. D. S. C., & Leite, J. R. (1996). Atomic and electronic structures of the gan (100, 110, 111) surfaces. In Resumos. São Paulo: Sociedade Brasileira de Fisica. -
NLM
Alves JLA, Alves HWL, Oliveira C, Valadao RDSC, Leite JR. Atomic and electronic structures of the gan (100, 110, 111) surfaces. Resumos. 1996 ;[citado 2024 abr. 18 ] -
Vancouver
Alves JLA, Alves HWL, Oliveira C, Valadao RDSC, Leite JR. Atomic and electronic structures of the gan (100, 110, 111) surfaces. Resumos. 1996 ;[citado 2024 abr. 18 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
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