Band structure of holes in 'P-TYPE''GAMA-DOPING' quantum wells and superlattices (1996)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Source:
- Título: Physical Review B
- Volume/Número/Paginação/Ano: v.53, p.9930, 1996
-
ABNT
SIPAHI, Guilherme Matos et al. Band structure of holes in 'P-TYPE''GAMA-DOPING' quantum wells and superlattices. Physical Review B, v. 53, p. 9930, 1996Tradução . . Acesso em: 02 dez. 2025. -
APA
Sipahi, G. M., Enderlein, R., Scolfaro, L. M. R., & Leite, J. R. (1996). Band structure of holes in 'P-TYPE''GAMA-DOPING' quantum wells and superlattices. Physical Review B, 53, 9930. -
NLM
Sipahi GM, Enderlein R, Scolfaro LMR, Leite JR. Band structure of holes in 'P-TYPE''GAMA-DOPING' quantum wells and superlattices. Physical Review B. 1996 ;53 9930.[citado 2025 dez. 02 ] -
Vancouver
Sipahi GM, Enderlein R, Scolfaro LMR, Leite JR. Band structure of holes in 'P-TYPE''GAMA-DOPING' quantum wells and superlattices. Physical Review B. 1996 ;53 9930.[citado 2025 dez. 02 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Energy levels due to n-type'GAMA'-doping in silicon
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
- Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
- Phase separation suppression in InGaN epitaxial layers due to biaxial strain
- Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations
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