Photoconductivity properties of 'DELTA'-'SI'doped 'IN''GA''AS' quantum well (1995)
- Authors:
- USP affiliated authors: BASMAJI, PIERRE - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Inpe
- Publisher place: Sao Jose dos Campos
- Date published: 1995
- Source:
- Título do periódico: Programa e Resumos
- Conference titles: Encontro da Sociedade Brasileira de Crescimento de Cristais
-
ABNT
CAMPO JUNIOR, V L et al. Photoconductivity properties of 'DELTA'-'SI'doped 'IN''GA''AS' quantum well. 1995, Anais.. Sao Jose dos Campos: Inpe, 1995. . Acesso em: 01 out. 2024. -
APA
Campo Junior, V. L., Marega Júnior, E., Rossi, J. C., Lubyshev, D. I., González-Borrero, P. P., & Basmaji, P. (1995). Photoconductivity properties of 'DELTA'-'SI'doped 'IN''GA''AS' quantum well. In Programa e Resumos. Sao Jose dos Campos: Inpe. -
NLM
Campo Junior VL, Marega Júnior E, Rossi JC, Lubyshev DI, González-Borrero PP, Basmaji P. Photoconductivity properties of 'DELTA'-'SI'doped 'IN''GA''AS' quantum well. Programa e Resumos. 1995 ;[citado 2024 out. 01 ] -
Vancouver
Campo Junior VL, Marega Júnior E, Rossi JC, Lubyshev DI, González-Borrero PP, Basmaji P. Photoconductivity properties of 'DELTA'-'SI'doped 'IN''GA''AS' quantum well. Programa e Resumos. 1995 ;[citado 2024 out. 01 ] - Localização excitônica em super-redes de (GaAs)-(AlAs) crescidas em diferentes planos cristalinos
- Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
- Estudo e caracterização de pontos quânticos semicondutores através de microscopia eletrônica de transmissão
- Photoluminescence study of excitons in the differently oriented self-assembled InAs and In IND.0.5Ga IND.0.5As quantum dots
- Vertically stacked self-assembled 'IN''GA''AS' quantum dot layers grown on (311)a / b and (001) orientations
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Molecular-beam epitaxy of self-assembled 'IN''AS' quantum dots on non- (100) oriented 'GA''AS'
- High index orientation effects of strained self-assembled 'IN''GA''AS' quantum dots
- Optical properties of self-assembled 'IN''AS' quantum dots on high-index 'GA''AS' substrates
- Temperature dependence of the quantization energy in self-assembled 'IN''GA''AS' quantum dots
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
