Influence of atomic-scale roughness on raman selection rules in the ultrathin-layer ' ('ga''as') IND.N1'' ('al''as') IND.N2' superlattices (1995)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS); MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review B
- Volume/Número/Paginação/Ano: v.51, n.15, p.9891-4, apr. 1995
-
ABNT
PUSEP, Yuri A. et al. Influence of atomic-scale roughness on raman selection rules in the ultrathin-layer ' ('ga''as') IND.N1'' ('al''as') IND.N2' superlattices. Physical Review B, v. 51, n. 15, p. 9891-4, 1995Tradução . . Acesso em: 23 abr. 2024. -
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Influence of atomic-scale roughness on raman selection rules in the ultrathin-layer ' ('ga''as') IND.N1'' ('al''as') IND.N2' superlattices. Physical Review B, 51( 15), 9891-4. -
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Influence of atomic-scale roughness on raman selection rules in the ultrathin-layer ' ('ga''as') IND.N1'' ('al''as') IND.N2' superlattices. Physical Review B. 1995 ;51( 15): 9891-4.[citado 2024 abr. 23 ] -
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Influence of atomic-scale roughness on raman selection rules in the ultrathin-layer ' ('ga''as') IND.N1'' ('al''as') IND.N2' superlattices. Physical Review B. 1995 ;51( 15): 9891-4.[citado 2024 abr. 23 ] - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
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