Influence of atomic-scale roughness on raman selection rules in the ultrathin-layer ' ('ga''as') IND.N1'' ('al''as') IND.N2' superlattices (1995)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS); MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review B
- Volume/Número/Paginação/Ano: v.51, n.15, p.9891-4, apr. 1995
-
ABNT
PUSEP, Yuri A.; SILVA, S W; GALZERANI, J C; LUBYSHEV, D I; BASMAJI, Pierre. Influence of atomic-scale roughness on raman selection rules in the ultrathin-layer ' ('ga''as') IND.N1'' ('al''as') IND.N2' superlattices. Physical Review B, New York, v. 51, n. 15, p. 9891-4, 1995. -
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Influence of atomic-scale roughness on raman selection rules in the ultrathin-layer ' ('ga''as') IND.N1'' ('al''as') IND.N2' superlattices. Physical Review B, 51( 15), 9891-4. -
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Influence of atomic-scale roughness on raman selection rules in the ultrathin-layer ' ('ga''as') IND.N1'' ('al''as') IND.N2' superlattices. Physical Review B. 1995 ;51( 15): 9891-4. -
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P. Influence of atomic-scale roughness on raman selection rules in the ultrathin-layer ' ('ga''as') IND.N1'' ('al''as') IND.N2' superlattices. Physical Review B. 1995 ;51( 15): 9891-4. - Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Spectroscopy of atomic-scale roughness in the ultrathin-layer 'GA''AS' / 'AL''AS' superlattices
- Charge transfer between percolation levels in a system with an artificial, strongly disordered potential
- Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Raman scattering of the optical vibrational modes in ' ('ga''as') IND.N'' ('al''as') IND.N' superlattices grown on (311)a and (311)b surfaces
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
