Ligth [i. e. light] assisted electron tunneling by DX center 'GA''AS' / 'AL''AS''GA' heterostructures grown by molecular beam epitaxy (1994)
- Authors:
- USP affiliated author: BASMAJI, PIERRE - IFSC
- School: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Place of publication: São Paulo
- Date published: 1994
- Source:
- Título do periódico: Resumos
- Conference title: Encontro Nacional de Fisica da Materia Condensada
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ABNT
ROSSI, J. C. et al. Ligth [i. e. light] assisted electron tunneling by DX center 'GA''AS' / 'AL''AS''GA' heterostructures grown by molecular beam epitaxy. 1994, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1994. . Acesso em: 03 jul. 2022. -
APA
Rossi, J. C., Lubyshev, D., Gusev, G., & Basmaji, P. (1994). Ligth [i. e. light] assisted electron tunneling by DX center 'GA''AS' / 'AL''AS''GA' heterostructures grown by molecular beam epitaxy. In Resumos. São Paulo: Sociedade Brasileira de Fisica. -
NLM
Rossi JC, Lubyshev D, Gusev G, Basmaji P. Ligth [i. e. light] assisted electron tunneling by DX center 'GA''AS' / 'AL''AS''GA' heterostructures grown by molecular beam epitaxy. Resumos. 1994 ;[citado 2022 jul. 03 ] -
Vancouver
Rossi JC, Lubyshev D, Gusev G, Basmaji P. Ligth [i. e. light] assisted electron tunneling by DX center 'GA''AS' / 'AL''AS''GA' heterostructures grown by molecular beam epitaxy. Resumos. 1994 ;[citado 2022 jul. 03 ] - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Spectroscopy of optical phonons in InAs/GaAs self-assembled quantum dots
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
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