Occurrence of ground and excited-state impurity bands in silicon inversion layers (1993)
- Authors:
- Autor USP: HIPOLITO, OSCAR - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Materials Research Society
- Publisher place: Boston
- Date published: 1993
- Source:
- Título do periódico: Abstracts
- Conference titles: Fall Meeting of the Materials Research Society
-
ABNT
HIPÓLITO, Oscar; SILVA, A. F. Occurrence of ground and excited-state impurity bands in silicon inversion layers. Anais.. Boston: Materials Research Society, 1993. -
APA
Hipólito, O., & Silva, A. F. (1993). Occurrence of ground and excited-state impurity bands in silicon inversion layers. In Abstracts. Boston: Materials Research Society. -
NLM
Hipólito O, Silva AF. Occurrence of ground and excited-state impurity bands in silicon inversion layers. Abstracts. 1993 ; -
Vancouver
Hipólito O, Silva AF. Occurrence of ground and excited-state impurity bands in silicon inversion layers. Abstracts. 1993 ; - Surface electrons on helium film
- Espectro de perda de energia de eletrons de um sistema semicondutor de dupla camada
- Impurity-bound magnetopolaron in 'GA''AS' quantum well structures
- Shallow donor impurity in quantum wire in the presence of a magnetic field
- Ground- and excited-state impurity bands in silicon inversion layers
- Density of states of on-axis hydrogenic impurities in a 'GA''AS' / 'GA''AL''AS' quantum-well wire of circular cross section
- Numerical simulation of electronic behavior in a finite superlattice with a tamm state: a possible submillimeter wave emitter without optical pumping
- Electron correlation effects in screened hydrogenic impurity states in many-valley semiconductors
- Magnetic field effects on impurity states in quantum dots
- Energia de excitons bidimensionais num campo magnetico com interacao com fonons lo
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
