Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings (1994)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Solid-State Electronics
- Volume/Número/Paginação/Ano: v.37, n.4-6, p.1231-4, 1994
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ABNT
GUSEV, G M et al. Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings. Solid-State Electronics, v. 37, n. 4-6, p. 1231-4, 1994Tradução . . Acesso em: 24 maio 2025. -
APA
Gusev, G. M., Basmaji, P., Lubyshev, D. I., Portal, J. C., Litvin, L. V., Nastaushev, Y. V., & Toropov, A. I. (1994). Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings. Solid-State Electronics, 37( 4-6), 1231-4. -
NLM
Gusev GM, Basmaji P, Lubyshev DI, Portal JC, Litvin LV, Nastaushev YV, Toropov AI. Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings. Solid-State Electronics. 1994 ;37( 4-6): 1231-4.[citado 2025 maio 24 ] -
Vancouver
Gusev GM, Basmaji P, Lubyshev DI, Portal JC, Litvin LV, Nastaushev YV, Toropov AI. Magnetic field tuned transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity in the array of 'AL''GA''AS' / 'GA''AS' rings. Solid-State Electronics. 1994 ;37( 4-6): 1231-4.[citado 2025 maio 24 ] - Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
- Movpe growth and characterization of 'GA''AS' and 'GA''AL''AS' on 'SI'
- Electrical properties of dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'
- Propriedades eletricas de pocos quanticos 'IN IND.X''GA IND.1-X''AS' / 'GA''AS' crescidos por epitaxia por feixes moleculares
- Negative magnetoresistance in coupled quantum wells
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