Design of a molecular memory device based on electron transfer reactions (1990)
- Authors:
- Autor USP: ONUCHIC, JOSE NELSON - IFSC
- Unidade: IFSC
- Subjects: BIOFÍSICA; MATÉRIA CONDENSADA; FÍSICO-QUÍMICA
- Language: Inglês
- Imprenta:
- Publisher: Engineering Foundation
- Publisher place: New York
- Date published: 1990
- Source:
- Título do periódico: Proceedings
- Conference titles: Molecular Electronics-Science and Technology
-
ABNT
BERATAN, D N e ONUCHIC, J N e HOPFIELD, J J. Design of a molecular memory device based on electron transfer reactions. 1990, Anais.. New York: Engineering Foundation, 1990. . Acesso em: 19 abr. 2024. -
APA
Beratan, D. N., Onuchic, J. N., & Hopfield, J. J. (1990). Design of a molecular memory device based on electron transfer reactions. In Proceedings. New York: Engineering Foundation. -
NLM
Beratan DN, Onuchic JN, Hopfield JJ. Design of a molecular memory device based on electron transfer reactions. Proceedings. 1990 ;[citado 2024 abr. 19 ] -
Vancouver
Beratan DN, Onuchic JN, Hopfield JJ. Design of a molecular memory device based on electron transfer reactions. Proceedings. 1990 ;[citado 2024 abr. 19 ] - Design of a molecular memory device: the electron transfer shift register memory
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