Electro-interface-phonon interaction in 'GA''AS' / alas and inas / gasb heterojunctions (1988)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; DEGANI, MARCOS HENRIQUE - IFSC
- Unidade: IFSC
- Assunto: FÍSICA
- Language: Português
- Imprenta:
- Source:
- Título do periódico: Surface Science
- Volume/Número/Paginação/Ano: v.196, n.1-3, p.459-65, mar. 1988
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ABNT
DEGANI, Marcos Henrique e HIPÓLITO, Oscar. Electro-interface-phonon interaction in 'GA''AS' / alas and inas / gasb heterojunctions. Surface Science, v. 196, n. 1-3, p. 459-65, 1988Tradução . . Acesso em: 20 abr. 2024. -
APA
Degani, M. H., & Hipólito, O. (1988). Electro-interface-phonon interaction in 'GA''AS' / alas and inas / gasb heterojunctions. Surface Science, 196( 1-3), 459-65. -
NLM
Degani MH, Hipólito O. Electro-interface-phonon interaction in 'GA''AS' / alas and inas / gasb heterojunctions. Surface Science. 1988 ;196( 1-3): 459-65.[citado 2024 abr. 20 ] -
Vancouver
Degani MH, Hipólito O. Electro-interface-phonon interaction in 'GA''AS' / alas and inas / gasb heterojunctions. Surface Science. 1988 ;196( 1-3): 459-65.[citado 2024 abr. 20 ] - Electron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures
- Excitation binding energy in 'GA''AS' - 'GA IND.1-X''AL IND.X' as quantum wells
- Exchange and correlations effects in a semiconductor quantum-well wire
- Temperature dependence of the polaron mass in a 'GA''AS'-'GA IND.1-X''AL IND.X''AS' quantum-well wire
- Impurity-shifted polaron energy in semimagnetic 'CD IND.1-X''MN IND.X' 'TE'-'CD''TE' quantum wells (pt.Ii)
- Modification of the electron-phonon interactions in gaas-gaalas heterojunctions
- Cyclotron resonance of interface polarons in semiconductor heterostructures
- The polaronic state of a multi-electron dimple on the liquid helium film
- Polaron effects on excitons in GaAs-'Ga IND.1-x''Al IND.X'As quantum wells
- IR emission by charge oscilattion in semiconductor heterostructures
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