Statistical properties polarons in quasi-one-dimensional semiconductors structures (1987)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; DEGANI, MARCOS HENRIQUE - IFSC
- Unidade: IFSC
- Subjects: FÍSICA TEÓRICA; SEMICONDUTORES
- Language: Português
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Publisher place: Sao Paulo
- Date published: 1987
- Source:
- Título do periódico: Programa e Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
-
ABNT
DEGANI, Marcos Henrique e HIPÓLITO, Oscar. Statistical properties polarons in quasi-one-dimensional semiconductors structures. 1987, Anais.. Sao Paulo: Sociedade Brasileira de Fisica, 1987. . Acesso em: 23 abr. 2024. -
APA
Degani, M. H., & Hipólito, O. (1987). Statistical properties polarons in quasi-one-dimensional semiconductors structures. In Programa e Resumos. Sao Paulo: Sociedade Brasileira de Fisica. -
NLM
Degani MH, Hipólito O. Statistical properties polarons in quasi-one-dimensional semiconductors structures. Programa e Resumos. 1987 ;[citado 2024 abr. 23 ] -
Vancouver
Degani MH, Hipólito O. Statistical properties polarons in quasi-one-dimensional semiconductors structures. Programa e Resumos. 1987 ;[citado 2024 abr. 23 ] - Electron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures
- Excitation binding energy in 'GA''AS' - 'GA IND.1-X''AL IND.X' as quantum wells
- Exchange and correlations effects in a semiconductor quantum-well wire
- Temperature dependence of the polaron mass in a 'GA''AS'-'GA IND.1-X''AL IND.X''AS' quantum-well wire
- Impurity-shifted polaron energy in semimagnetic 'CD IND.1-X''MN IND.X' 'TE'-'CD''TE' quantum wells (pt.Ii)
- Modification of the electron-phonon interactions in gaas-gaalas heterojunctions
- Cyclotron resonance of interface polarons in semiconductor heterostructures
- The polaronic state of a multi-electron dimple on the liquid helium film
- Polaron effects on excitons in GaAs-'Ga IND.1-x''Al IND.X'As quantum wells
- IR emission by charge oscilattion in semiconductor heterostructures
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