Recombination dynamics of Landau levels in an InGaAs/InP quantum well (2018)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- DOI: 10.1103/PhysRevB.98.155431
- Subjects: POÇOS QUÂNTICOS; FOTOLUMINESCÊNCIA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2018
- Source:
- Título do periódico: Physical Review B
- ISSN: 2469-9950
- Volume/Número/Paginação/Ano: v. 98, n. 15, p. 155431-1-155431-7, Oct. 2018
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
TEODORO, M. D. et al. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Physical Review B, v. 98, n. 15, p. 155431-1-155431-7, 2018Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.98.155431. Acesso em: 24 abr. 2024. -
APA
Teodoro, M. D., Tavares, B. G. M., Castro, E. D. G., LaPierre, R. R., & Pusep, Y. A. (2018). Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Physical Review B, 98( 15), 155431-1-155431-7. doi:10.1103/PhysRevB.98.155431 -
NLM
Teodoro MD, Tavares BGM, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Physical Review B. 2018 ; 98( 15): 155431-1-155431-7.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1103/PhysRevB.98.155431 -
Vancouver
Teodoro MD, Tavares BGM, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Physical Review B. 2018 ; 98( 15): 155431-1-155431-7.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1103/PhysRevB.98.155431 - Transition from localized to extended states below the Fermi level in GaAs/AlGaAs multiple quantum well heterostructures
- Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
- Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As
- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Coherency of elementary excitations in disordered electron system
- Miniband effects in short-period InGaAs/InP superlattices
- Coherence of elementary excitations in disordered electron systems
- Conduction mechanisms in GaAs nanowire photovoltaics
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- Circularly polarized photoluminescence of GaAs/AlGaAs quantum hall bilayers
Informações sobre o DOI: 10.1103/PhysRevB.98.155431 (Fonte: oaDOI API)
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