Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective (2016)
- Authors:
- USP affiliated authors: MARTINO, JOÃO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP ; SIVIERI, VICTOR DE BODT - EP ; BORDALLO, CAIO CESAR MENDES - EP
- Unidade: EP
- DOI: 10.1109/ted.2016.2559580
- Subjects: TRANSISTORES; SILÍCIO
- Language: Inglês
- Source:
- Título do periódico: IEEE Transactions on Electron Devices
- Volume/Número/Paginação/Ano: v. 63, n. 7, p. 2930-2935, July 2016
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
- Licença: other-oa
-
ABNT
BORDALLO, Caio Cesar Mendes et al. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, v. 63, n. 7, p. 2930-2935, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2559580. Acesso em: 18 abr. 2024. -
APA
Bordallo, C. C. M., Claeys, C., Thean, A., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2016). Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, 63( 7), 2930-2935. doi:10.1109/ted.2016.2559580 -
NLM
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1109/ted.2016.2559580 -
Vancouver
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2024 abr. 18 ] Available from: https://doi.org/10.1109/ted.2016.2559580 - The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs
- Analog parameters of solid source Zn diffusion In X Ga1−X As nTFETs down to 10 K
- InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
- Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs
- Analog performance of standard and uniaxial strained triple-gate SOI FinFETs under x-ray radiation
- Influence of interface trap density on vertical NW-TFETs with different source composition
- Temperature influence on nanowire tunnel field effect transistors
- Threshold voltage extraction in Tunnel FETs
- Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source
- Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation
Informações sobre o DOI: 10.1109/ted.2016.2559580 (Fonte: oaDOI API)
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