Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems (2017)
- Authors:
- USP affiliated authors: GUSEV, GENNADY - IF ; HERNANDEZ, FELIX GUILLERMO GONZALEZ - IF
- Unidade: IF
- DOI: 10.1103/PhysRevB.95.245315
- Subjects: SEMICONDUTORES; SPINTRÔNICA
- Keywords: ACOPLAMENTO GIRATÓRIO-ÓRBITA; GÁS ELETRÔNICO BIDIMENSIONAL; DIFUSÃO E PASSEIOS ALEATÓRIOS; EFEITO KERR MAGNETO-ÓPTICO
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review B
- ISSN: 2469-9950
- Volume/Número/Paginação/Ano: v. 95, n. 24, p. 245315/1-245315/6, 2017
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: hybrid
- Licença: publisher-specific-oa
-
ABNT
LUENGO-KOVAC, M et al. Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems. Physical Review B, v. 95, n. 24, p. 245315/1-245315/6, 2017Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.95.245315. Acesso em: 29 mar. 2024. -
APA
Luengo-Kovac, M., Moraes, F. C. D. de, Ferreira Junior, G., Ribeiro, A. S. L., Gusev, G. M., Bakarov, A. K., et al. (2017). Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems. Physical Review B, 95( 24), 245315/1-245315/6. doi:10.1103/PhysRevB.95.245315 -
NLM
Luengo-Kovac M, Moraes FCD de, Ferreira Junior G, Ribeiro ASL, Gusev GM, Bakarov AK, Sih V, Gonzalez Hernandez FG. Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems [Internet]. Physical Review B. 2017 ; 95( 24): 245315/1-245315/6.[citado 2024 mar. 29 ] Available from: https://doi.org/10.1103/PhysRevB.95.245315 -
Vancouver
Luengo-Kovac M, Moraes FCD de, Ferreira Junior G, Ribeiro ASL, Gusev GM, Bakarov AK, Sih V, Gonzalez Hernandez FG. Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems [Internet]. Physical Review B. 2017 ; 95( 24): 245315/1-245315/6.[citado 2024 mar. 29 ] Available from: https://doi.org/10.1103/PhysRevB.95.245315 - Tailoring multilayer quantum wells for spin devices
- Two-dimensional topological insulator state in double HgTe quantum well
- Multiple crossings of Landau levels of two-dimensional fermions in double HgTe quantum wells
- Engineering topological phases in triple HgTe/CdTe quantum wells
- Gate control of the spin mobility through the modi cation of the spin-orbit interaction in two-dimensional systems
- Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells
- Resonant optical control of the electrically-induced spin polarization by periodic excitation
- Macroscopic transverse drift of long current-induced spin coherence in two-dimensional electron gases
- Macroscopic transport of a current-induced spin polarization
- Long-lived spin coherence of a two-dimensional electron gas in a wide quantum well
Informações sobre o DOI: 10.1103/PhysRevB.95.245315 (Fonte: oaDOI API)
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