Collapse of the 'GD' POT. 3+' ESR fine structure throughout the coherent temperature of the 'GD'-doped kondo Semiconductor 'CE''FE IND. 4''P IND. 12' (2016)
- Authors:
- Autor USP: GARCIA, FERNANDO ASSIS - IF
- Unidade: IF
- Subjects: SPIN; SEMICONDUTORES
- Language: Inglês
- Imprenta:
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ABNT
VENEGAS, P. A. et al. Collapse of the 'GD' POT. 3+' ESR fine structure throughout the coherent temperature of the 'GD'-doped kondo Semiconductor 'CE''FE IND. 4''P IND. 12'. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/ftp/arxiv/papers/1607/1607.04620.pdf. Acesso em: 26 abr. 2024. , 2016 -
APA
Venegas, P. A., Garcia, D. J., Cabrera, G., Avila, M. A., Rettori, C., & Garcia, F. A. (2016). Collapse of the 'GD' POT. 3+' ESR fine structure throughout the coherent temperature of the 'GD'-doped kondo Semiconductor 'CE''FE IND. 4''P IND. 12'. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/ftp/arxiv/papers/1607/1607.04620.pdf -
NLM
Venegas PA, Garcia DJ, Cabrera G, Avila MA, Rettori C, Garcia FA. Collapse of the 'GD' POT. 3+' ESR fine structure throughout the coherent temperature of the 'GD'-doped kondo Semiconductor 'CE''FE IND. 4''P IND. 12' [Internet]. 2016 ;[citado 2024 abr. 26 ] Available from: https://arxiv.org/ftp/arxiv/papers/1607/1607.04620.pdf -
Vancouver
Venegas PA, Garcia DJ, Cabrera G, Avila MA, Rettori C, Garcia FA. Collapse of the 'GD' POT. 3+' ESR fine structure throughout the coherent temperature of the 'GD'-doped kondo Semiconductor 'CE''FE IND. 4''P IND. 12' [Internet]. 2016 ;[citado 2024 abr. 26 ] Available from: https://arxiv.org/ftp/arxiv/papers/1607/1607.04620.pdf - Local electronic structure of itinerant magnets
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