Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots (2016)
- Autores:
- Autores USP: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF
- Unidade: IF
- DOI: 10.1088/0022-3727/49/21/215101
- Assuntos: MICROSCOPIA; ESTRUTURA ELETRÔNICA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Journal of Physics D: Applied Physics
- Volume/Número/Paginação/Ano: v. 49, n. 21, p. 215101, jun. 2016
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
TANAKA, R. Y. et al. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots. Journal of Physics D: Applied Physics, v. 49, n. ju 2016, p. 215101, 2016Tradução . . Disponível em: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101. Acesso em: 16 abr. 2024. -
APA
Tanaka, R. Y., Abe, N. M., Passaro, A., Silva, E. C. F. da, & Quivy, A. A. (2016). Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots. Journal of Physics D: Applied Physics, 49( ju 2016), 215101. doi:10.1088/0022-3727/49/21/215101 -
NLM
Tanaka RY, Abe NM, Passaro A, Silva ECF da, Quivy AA. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots [Internet]. Journal of Physics D: Applied Physics. 2016 ; 49( ju 2016): 215101.[citado 2024 abr. 16 ] Available from: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101 -
Vancouver
Tanaka RY, Abe NM, Passaro A, Silva ECF da, Quivy AA. Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots [Internet]. Journal of Physics D: Applied Physics. 2016 ; 49( ju 2016): 215101.[citado 2024 abr. 16 ] Available from: http://iopscience.iop.org/article/10.1088/0022-3727/49/21/215101 - Estudo dos modelos de ajuste da variaão do "gap" com a temperatura em GaAs "bulk"
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
- Energy levels for lens-shaped self-assembled quantum dots heterostructures
- High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors
- Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
- Modeling noise in superlattice quantum-well infrared photodetectors
- Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells
- The effect of confinement on the temperature dependence of the excitonic transition energy in GaAs/`Al IND.X´`Ga IND.1-X´As quantum wells
- Computation of dark current in QWIPs using a modelling based on ehrenfest theorem
- Growth, processing and testing of infrared photodetectors based on quantum dots
Informações sobre o DOI: 10.1088/0022-3727/49/21/215101 (Fonte: oaDOI API)
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