Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates (2016)
- Authors:
- Autor USP: MORELHAO, SERGIO LUIZ - IF
- Unidade: IF
- DOI: 10.1063/1.4947266
- Subjects: SEMICONDUTORES; RAIOS X
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: JOURNAL OF APPLIED PHYSICS
- Volume/Número/Paginação/Ano: v. 119, n. 16, p. 165303, abr. 2016
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
FORNARI, Celso I. et al. Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates. JOURNAL OF APPLIED PHYSICS, v. 119, n. 16, p. 165303, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4947266. Acesso em: 24 abr. 2024. -
APA
Fornari, C. I., Rappl, P. H. O., Abramof, E., & Morelhao, S. L. (2016). Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates. JOURNAL OF APPLIED PHYSICS, 119( 16), 165303. doi:10.1063/1.4947266 -
NLM
Fornari CI, Rappl PHO, Abramof E, Morelhao SL. Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates [Internet]. JOURNAL OF APPLIED PHYSICS. 2016 ; 119( 16): 165303.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1063/1.4947266 -
Vancouver
Fornari CI, Rappl PHO, Abramof E, Morelhao SL. Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates [Internet]. JOURNAL OF APPLIED PHYSICS. 2016 ; 119( 16): 165303.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1063/1.4947266 - High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001)
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Informações sobre o DOI: 10.1063/1.4947266 (Fonte: oaDOI API)
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