Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions (2015)
- Authors:
- USP affiliated authors: ZUCOLOTTO, VALTENCIR - IFSC ; FARIA, ROBERTO MENDONÇA - IFSC
- Unidade: IFSC
- DOI: 10.1002/pssb.201451556
- Subjects: SEMICONDUTORES; POLÍMEROS (MATERIAIS); NANOTECNOLOGIA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physica Status Solidi B
- ISSN: 0370-1972
- Volume/Número/Paginação/Ano: v. 252, n. 2, p. 404-410, Feb. 2015
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
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ABNT
GOZZI, Giovani et al. Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions. Physica Status Solidi B, v. 252, n. 2, p. 404-410, 2015Tradução . . Disponível em: https://doi.org/10.1002/pssb.201451556. Acesso em: 26 abr. 2024. -
APA
Gozzi, G., Queiroz, E. L., Zucolotto, V., Faria, R. M., & Chinaglia, D. L. (2015). Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions. Physica Status Solidi B, 252( 2), 404-410. doi:10.1002/pssb.201451556 -
NLM
Gozzi G, Queiroz EL, Zucolotto V, Faria RM, Chinaglia DL. Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions [Internet]. Physica Status Solidi B. 2015 ; 252( 2): 404-410.[citado 2024 abr. 26 ] Available from: https://doi.org/10.1002/pssb.201451556 -
Vancouver
Gozzi G, Queiroz EL, Zucolotto V, Faria RM, Chinaglia DL. Hopping–tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions [Internet]. Physica Status Solidi B. 2015 ; 252( 2): 404-410.[citado 2024 abr. 26 ] Available from: https://doi.org/10.1002/pssb.201451556 - Caracterização elétrica de diodos poliméricos emissores de luz de MEH-PPV contendo camadas injetoras
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Informações sobre o DOI: 10.1002/pssb.201451556 (Fonte: oaDOI API)
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