Defect-mediated excitation of Yb ions in amorphous SiN films (2013)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Subjects: FILMES FINOS; ITÉRBIO
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Pesquisa em Materiais - SBPMat
- Publisher place: Rio de Janeiro
- Date published: 2013
- Source:
- Título do periódico: Program Book
- Conference titles: Brazilian MRS Meeting
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ABNT
RIBEIRO, C. T. M. et al. Defect-mediated excitation of Yb ions in amorphous SiN films. 2013, Anais.. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat, 2013. . Acesso em: 19 abr. 2024. -
APA
Ribeiro, C. T. M., Gallo, I. B., Zanatta, A. R., Jahn, U., & Ramsteiner, M. (2013). Defect-mediated excitation of Yb ions in amorphous SiN films. In Program Book. Rio de Janeiro: Sociedade Brasileira de Pesquisa em Materiais - SBPMat. -
NLM
Ribeiro CTM, Gallo IB, Zanatta AR, Jahn U, Ramsteiner M. Defect-mediated excitation of Yb ions in amorphous SiN films. Program Book. 2013 ;[citado 2024 abr. 19 ] -
Vancouver
Ribeiro CTM, Gallo IB, Zanatta AR, Jahn U, Ramsteiner M. Defect-mediated excitation of Yb ions in amorphous SiN films. Program Book. 2013 ;[citado 2024 abr. 19 ] - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
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