Influence of interface trap density on vertical NW-TFETs with different source composition (2013)
- Autores:
- Autores USP: MARTINO, JOAO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Idioma: Inglês
- Imprenta:
- Editora: Institut Superieur d'Électronique
- Local: Paris
- Data de publicação: 2013
- Fonte:
- Título do periódico: EUROSOI 2013
- Nome do evento: European Workshop on Silicon on Insulator Technology, Devices and Circuits
-
ABNT
MARTINO, João Antonio et al. Influence of interface trap density on vertical NW-TFETs with different source composition. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 19 abr. 2024. -
APA
Martino, J. A., Souza, F. N., Agopian, P. G. D., Rooyackers, R., Vandooren, A., Simoen, E., & Claeys, C. (2013). Influence of interface trap density on vertical NW-TFETs with different source composition. In EUROSOI 2013. Paris: Institut Superieur d'Électronique. -
NLM
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 abr. 19 ] -
Vancouver
Martino JA, Souza FN, Agopian PGD, Rooyackers R, Vandooren A, Simoen E, Claeys C. Influence of interface trap density on vertical NW-TFETs with different source composition. EUROSOI 2013. 2013 ;[citado 2024 abr. 19 ] - Temperature influence on nanowire tunnel field effect transistors
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