Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation (2013)
- Authors:
- USP affiliated authors: MARTINO, JOAO ANTONIO - EP ; AGOPIAN, PAULA GHEDINI DER - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA (CONGRESSOS)
- Language: Inglês
- Imprenta:
- Publisher: Institut Superieur d'Électronique
- Publisher place: Paris
- Date published: 2013
- Source:
- Título do periódico: EUROSOI 2013
- Conference titles: European Workshop on Silicon on Insulator Technology, Devices and Circuits
-
ABNT
MARTINO, João Antonio et al. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. 2013, Anais.. Paris: Institut Superieur d'Électronique, 2013. . Acesso em: 19 abr. 2024. -
APA
Martino, J. A., Agopian, P. G. D., Peruzzi, V. V., Gimenez, S. P., Silveira, M. A. G., Simoen, E., & Claeys, C. (2013). Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. In EUROSOI 2013. Paris: Institut Superieur d'Électronique. -
NLM
Martino JA, Agopian PGD, Peruzzi VV, Gimenez SP, Silveira MAG, Simoen E, Claeys C. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. EUROSOI 2013. 2013 ;[citado 2024 abr. 19 ] -
Vancouver
Martino JA, Agopian PGD, Peruzzi VV, Gimenez SP, Silveira MAG, Simoen E, Claeys C. Experimental comparison between tensile and compressive uniaxially stressed MuGFETs under X-ray radiation. EUROSOI 2013. 2013 ;[citado 2024 abr. 19 ] - Influence of interface trap density on vertical NW-TFETs with different source composition
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