Transport in disordered two-dimensional topological insulator (2011)
- Autores:
- Autor USP: GUSEV, GENNADY - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Idioma: Inglês
- Imprenta:
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ABNT
GUSEV, G M et al. Transport in disordered two-dimensional topological insulator. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf. Acesso em: 19 abr. 2024. , 2011 -
APA
Gusev, G. M., Kvon, Z. D., Shegai, O. A., Portal, J. C., Mikhailov, N. N., & Dvoretsky, S. A. (2011). Transport in disordered two-dimensional topological insulator. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf -
NLM
Gusev GM, Kvon ZD, Shegai OA, Portal JC, Mikhailov NN, Dvoretsky SA. Transport in disordered two-dimensional topological insulator [Internet]. 2011 ;[citado 2024 abr. 19 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf -
Vancouver
Gusev GM, Kvon ZD, Shegai OA, Portal JC, Mikhailov NN, Dvoretsky SA. Transport in disordered two-dimensional topological insulator [Internet]. 2011 ;[citado 2024 abr. 19 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf - Spin-splitting collapse in a 2D electron gas in AlGaAs/GaAs heterostructure
- Conductivity corrections in a strongly correlated and disordered two-dimensional electron system
- Symmetric, gated, ballistic rings as tunable electron interferometers
- Magnetoconductance of two independently tunable parallel point contacts using an elliptical antidot
- High resolution antidot lattices in alAsAs/GaAs parabolic quantum well heterostructures obtained by FIB
- Memory effects in backscattering of two-dimensional electrons in corrugated systems
- Magnetoresistance oscillations in triple quantum wells under microwave irradiation
- Thermally activated intersubband scattering and oscillating magnetoresistance in quantum wells
- Microwave-induced Hall resistance in bilayer electron systems
- Transport in a bilayer system at high Landau filling factor
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