First principle simulations of dual gate bilayer graphene field effect nanotransistors (2011)
- Autores:
- Autores USP: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: CARBONO
- Idioma: Inglês
- Imprenta:
- Editora: SBF
- Local: Foz do Iguaçu
- Data de publicação: 2011
- Fonte:
- Título do periódico: Resumo
- Nome do evento: Econtro de Física
-
ABNT
PADILHA, José Eduardo et al. First principle simulations of dual gate bilayer graphene field effect nanotransistors. 2011, Anais.. Foz do Iguaçu: SBF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0999-1.pdf. Acesso em: 19 set. 2024. -
APA
Padilha, J. E., Silva, A. J. R. da, Fazzio, A., & Lima, M. P. (2011). First principle simulations of dual gate bilayer graphene field effect nanotransistors. In Resumo. Foz do Iguaçu: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0999-1.pdf -
NLM
Padilha JE, Silva AJR da, Fazzio A, Lima MP. First principle simulations of dual gate bilayer graphene field effect nanotransistors [Internet]. Resumo. 2011 ;[citado 2024 set. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0999-1.pdf -
Vancouver
Padilha JE, Silva AJR da, Fazzio A, Lima MP. First principle simulations of dual gate bilayer graphene field effect nanotransistors [Internet]. Resumo. 2011 ;[citado 2024 set. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0999-1.pdf - Electronic and structural properties of "C IND.59" Si on the monohydride Si(100) surface
- First principles study of the ferromagnetism in "Ga IND.1-x" "Mn IND.x" As semiconductors
- Adsorption of "C IND.59" Si on Si(100) monohydride surface
- Influence of two vacancies in bubdles and isolated carbon naotubes
- {\it Ab initio} molecular dynamics study of pure and contaminated gold nanowires
- Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'
- Effect of impurities on the breaking of Au nanowires
- Adsorption and incorporation of Mn on Si(100)
- Microscopic picture of the single vacancy in germanium
- Adsorption of monomers on semiconductors and the importance of surface degrees of freedom
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