Designing realistic graphene-based spintronics devices (2010)
- Autores:
- Autores USP: FAZZIO, ADALBERTO - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF
- Unidade: IF
- Assunto: FÍSICA DA MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Nome do evento: Encontro Nacional de Física da Matéria Condensada
-
ABNT
ROCHA, A R et al. Designing realistic graphene-based spintronics devices. 2010, Anais.. São Paulo: SBF, 2010. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R1178-1.pdf. Acesso em: 24 abr. 2024. -
APA
Rocha, A. R., Martins, T. B., Fazzio, A., & Silva, A. J. R. da. (2010). Designing realistic graphene-based spintronics devices. In . São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R1178-1.pdf -
NLM
Rocha AR, Martins TB, Fazzio A, Silva AJR da. Designing realistic graphene-based spintronics devices [Internet]. 2010 ;[citado 2024 abr. 24 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R1178-1.pdf -
Vancouver
Rocha AR, Martins TB, Fazzio A, Silva AJR da. Designing realistic graphene-based spintronics devices [Internet]. 2010 ;[citado 2024 abr. 24 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxiii/sys/resumos/R1178-1.pdf - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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