Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer (2009)
- Autores:
- Autor USP: PEREYRA, INES - EP
- Unidade: EP
- Assunto: DIELÉTRICOS
- Idioma: Inglês
- Resumo: Metal oxide-semiconductor capacitors with TiOx deposited with different O2 partial pressures (30%, 35%, and 40%) and annealed at 550, 750, and 1000 °C were fabricated and characterized. Fourier transform infrared, x-ray near edge spectroscopy, and elipsometry measurements were performed to characterize the TiOx films. TiOxNy films were also obtained by adding nitrogen to the gaseous mixture and physical results were presented. Capacitance-voltage (1 MHz) and current-voltage measurements were utilized to obtain the effective dielectric constant, effective oxide thickness, leakage current density, and interface quality. The results show that the obtained TiOx films present a dielectric constant varying from 40 to 170 and a leakage current density (for VG=−1 V, for some structures as low as 1 nA/cm2, acceptable for complementary metal oxide semiconductor circuits fabrication), indicating that this material is a viable, in terms of leakage current density, highk substitute for current ultrathin dielectric layers
- Imprenta:
- Fonte:
- Título do periódico: Journal of Vacuum Science and Technology B
- Volume/Número/Paginação/Ano: v. 27, n. 1, p. 236-245, jan./feb. 2009
-
ABNT
ALBERTIN, Katia Franklin e PEREYRA, Inés. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B, v. 27, n. ja/feb. 2009, p. 236-245, 2009Tradução . . Acesso em: 19 abr. 2024. -
APA
Albertin, K. F., & Pereyra, I. (2009). Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B, 27( ja/feb. 2009), 236-245. -
NLM
Albertin KF, Pereyra I. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B. 2009 ; 27( ja/feb. 2009): 236-245.[citado 2024 abr. 19 ] -
Vancouver
Albertin KF, Pereyra I. Study of metal oxide-semiconductor capacitors with rf magnetron sputtering TiOx and TiOxNy gate dielectric layer. Journal of Vacuum Science and Technology B. 2009 ; 27( ja/feb. 2009): 236-245.[citado 2024 abr. 19 ] - Silicon carbide clusters in silicon formed by carbon ions implantation
- One mask step a-Si:H/a-SiOxNy thin film transistor
- Photoluminescenct silicon-rich silicon oxynitride alloys grown by PECVD
- Photoluminescence in silicon-rich PECVD silicon oxynitride alloys
- Study of MOS capacitors with annealed TiO2 gate dielectric layer
- Study of TiOxNy MOS capacitors
- High quality low temperature DPECVD silicon dioxide
- Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures
- Low temperature pecvd silicon oxide
- Ligas de silício amorfo hidrogenado: obtenção, caracterização e aplicações
Como citar
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
