Evidence of magnetic vortices formation in Mn-based sub-micrometer structures embedded in SiMn films (2009)
- Autores:
- Autores USP: ZANATTA, ANTONIO RICARDO - IFSC ; SILVA, MARCELO DE ASSUMPCAO PEREIRA DA - IFSC
- Unidade: IFSC
- Assuntos: SEMICONDUTORES; MANGANÊS; FILMES FINOS; PROPRIEDADES DOS MATERIAIS; FERROMAGNETISMO; SPIN
- Idioma: Inglês
- Imprenta:
- Editora: Utrecht University
- Local: Utrecht
- Data de publicação: 2009
- Fonte:
- Título do periódico: Book of Abstracts
- Nome do evento: International Conference on Amorphous and Nanocrystalline Semiconductors - ICANS
-
ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo e SILVA, Marcelo de Assumpção Pereira da. Evidence of magnetic vortices formation in Mn-based sub-micrometer structures embedded in SiMn films. 2009, Anais.. Utrecht: Utrecht University, 2009. . Acesso em: 24 abr. 2024. -
APA
Ferri, F. A., Zanatta, A. R., & Silva, M. de A. P. da. (2009). Evidence of magnetic vortices formation in Mn-based sub-micrometer structures embedded in SiMn films. In Book of Abstracts. Utrecht: Utrecht University. -
NLM
Ferri FA, Zanatta AR, Silva M de AP da. Evidence of magnetic vortices formation in Mn-based sub-micrometer structures embedded in SiMn films. Book of Abstracts. 2009 ;[citado 2024 abr. 24 ] -
Vancouver
Ferri FA, Zanatta AR, Silva M de AP da. Evidence of magnetic vortices formation in Mn-based sub-micrometer structures embedded in SiMn films. Book of Abstracts. 2009 ;[citado 2024 abr. 24 ] - Development of the 'MN''SI IND. 1.7' phase in 'MN'-containing 'SI' films
- Development of the Mn'Si IND. 1.7' phase in Mn-containing Si films
- Evidence of magnetic vortices formation in Mn-based sub-micrometre structures embedded in Si-Mn films
- Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films
- Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films
- Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
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