Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point (2008)
- Autores:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Idioma: Inglês
- Imprenta:
- Editora: The Electrochemical Society
- Local: Pennington
- Data de publicação: 2008
- Fonte:
- Título do periódico: SBMICRO 2008: Anais
- ISSN: 1938-5862
- Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO
-
ABNT
CAMILLO, Luciano Mendes et al. Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 19 abr. 2024. -
APA
Camillo, L. M., Martino, J. A., Simoen, E., & Claeys, C. (2008). Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society. -
NLM
Camillo LM, Martino JA, Simoen E, Claeys C. Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. SBMICRO 2008: Anais. 2008 ;[citado 2024 abr. 19 ] -
Vancouver
Camillo LM, Martino JA, Simoen E, Claeys C. Influence of the drain bias and gate lenght of partially depleted SOI MOSFETs on the ZTC biasing point. SBMICRO 2008: Anais. 2008 ;[citado 2024 abr. 19 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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