Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method (2009)
- Autores:
- Autor USP: MULATO, MARCELO - FFCLRP
- Unidade: FFCLRP
- Assuntos: FILMES FINOS; SEMICONDUTORES
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Solid State Sciences
- ISSN: 1293-2558
- Volume/Número/Paginação/Ano: v. 11, n. 2, p. 456-460, 2009
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ABNT
GUERRA, Elidia Maria e SILVA, Glaucio Ribeiro e MULATO, Marcelo. Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method. Solid State Sciences, v. 11, n. 2, p. 456-460, 2009Tradução . . Acesso em: 26 abr. 2024. -
APA
Guerra, E. M., Silva, G. R., & Mulato, M. (2009). Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method. Solid State Sciences, 11( 2), 456-460. -
NLM
Guerra EM, Silva GR, Mulato M. Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method. Solid State Sciences. 2009 ; 11( 2): 456-460.[citado 2024 abr. 26 ] -
Vancouver
Guerra EM, Silva GR, Mulato M. Extended gate field effect transistor using 'V IND.2''O IND.5' xerogel sensing membrane by sol-gel method. Solid State Sciences. 2009 ; 11( 2): 456-460.[citado 2024 abr. 26 ] - Electrodeposited NiFe films for planar fluxgate sensors
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