InAs quantum dots over InGaAs for infrared photodetectors (2004)
- Authors:
- USP affiliated authors: NUNES, LUIZ ANTONIO DE OLIVEIRA - IFSC ; MAREGA JUNIOR, EUCLYDES - IFSC
- Unidade: IFSC
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Elsevier Science
- Publisher place: Amsterdam
- Date published: 2004
- Source:
- Título do periódico: Journal of Crystal Growth
- ISSN: 0022-0248
- Volume/Número/Paginação/Ano: v. 272, p. 192-197, Dec. 2004
- Conference titles: International Conference on Metalorganic Vapor Phase Epitaxy
-
ABNT
PIRES, M. P. et al. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. Amsterdam: Elsevier Science. . Acesso em: 24 abr. 2024. , 2004 -
APA
Pires, M. P., Landi, S. M., Tribuzy, C. V. B., Nunes, L. A. de O., Marega Júnior, E., & Souza, P. L. (2004). InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. Amsterdam: Elsevier Science. -
NLM
Pires MP, Landi SM, Tribuzy CVB, Nunes LA de O, Marega Júnior E, Souza PL. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. 2004 ; 272 192-197.[citado 2024 abr. 24 ] -
Vancouver
Pires MP, Landi SM, Tribuzy CVB, Nunes LA de O, Marega Júnior E, Souza PL. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. 2004 ; 272 192-197.[citado 2024 abr. 24 ] - Fluorescence enhancement in 'Er POT.3+' -doped tellurite transparent glass
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- Fluorescence enhancement in 'Er POT.3+'-doped tellurite glass from gold nanoparticles
- Gain medium for plasmonic waveguide
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