Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures (2004)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; INTERAÇÕES FUNDAMENTAIS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Solid State Communications
- ISSN: 0038-1098
-
ABNT
ALMEIDA, R B et al. Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures. Solid State Communications, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4BFXF5K-8-34&_cdi=5545&_orig=browse&_coverDate=04%2F30%2F2004&_sk=998699998&view=c&wchp=dGLbVtb-zSkzS&_acct=C000049650&_version=1&_userid=972067&md5=fc468d762a4d997bee71d4a23b023d3d&ie=f.pdf. Acesso em: 20 abr. 2024. -
APA
Almeida, R. B., Borges, A. N., Machado, P. C. M., Leite, J. R., & Osório, F. A. P. (2004). Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures. Solid State Communications. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4BFXF5K-8-34&_cdi=5545&_orig=browse&_coverDate=04%2F30%2F2004&_sk=998699998&view=c&wchp=dGLbVtb-zSkzS&_acct=C000049650&_version=1&_userid=972067&md5=fc468d762a4d997bee71d4a23b023d3d&ie=f.pdf -
NLM
Almeida RB, Borges AN, Machado PCM, Leite JR, Osório FAP. Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures [Internet]. Solid State Communications. 2004 ;[citado 2024 abr. 20 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4BFXF5K-8-34&_cdi=5545&_orig=browse&_coverDate=04%2F30%2F2004&_sk=998699998&view=c&wchp=dGLbVtb-zSkzS&_acct=C000049650&_version=1&_userid=972067&md5=fc468d762a4d997bee71d4a23b023d3d&ie=f.pdf -
Vancouver
Almeida RB, Borges AN, Machado PCM, Leite JR, Osório FAP. Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures [Internet]. Solid State Communications. 2004 ;[citado 2024 abr. 20 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TVW-4BFXF5K-8-34&_cdi=5545&_orig=browse&_coverDate=04%2F30%2F2004&_sk=998699998&view=c&wchp=dGLbVtb-zSkzS&_acct=C000049650&_version=1&_userid=972067&md5=fc468d762a4d997bee71d4a23b023d3d&ie=f.pdf - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
- Current research on semiconductor physics
- Hydrogen passivation of shallow acceptor levels in crystalline silicon
- Estrutura eletronica do semicondutor diamante tipo p
- Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy
- Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics
- Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium
- Deep levels induced by 3d transition metal impurities in diamond
- Native surface defects at low-index reconstructed cubic GaN surfaces
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas