A possible route to grow substitutional TM in 'Si IND. (1-x)''Ge IND. x' alloys (2004)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
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ABNT
SILVA, Antonio Jose Roque da e FAZZIO, Adalberto e ANTONELLI, A. A possible route to grow substitutional TM in 'Si IND. (1-x)''Ge IND. x' alloys. 2004, Anais.. São Paulo: SBF, 2004. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1470-1.pdf. Acesso em: 19 set. 2024. -
APA
Silva, A. J. R. da, Fazzio, A., & Antonelli, A. (2004). A possible route to grow substitutional TM in 'Si IND. (1-x)''Ge IND. x' alloys. In Resumos. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1470-1.pdf -
NLM
Silva AJR da, Fazzio A, Antonelli A. A possible route to grow substitutional TM in 'Si IND. (1-x)''Ge IND. x' alloys [Internet]. Resumos. 2004 ;[citado 2024 set. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1470-1.pdf -
Vancouver
Silva AJR da, Fazzio A, Antonelli A. A possible route to grow substitutional TM in 'Si IND. (1-x)''Ge IND. x' alloys [Internet]. Resumos. 2004 ;[citado 2024 set. 19 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxvii/sys/resumos/R1470-1.pdf - Electronic and structural properties of "C IND.59" Si on the monohydride Si(100) surface
- First principles study of the ferromagnetism in "Ga IND.1-x" "Mn IND.x" As semiconductors
- Adsorption of "C IND.59" Si on Si(100) monohydride surface
- Influence of two vacancies in bubdles and isolated carbon naotubes
- {\it Ab initio} molecular dynamics study of pure and contaminated gold nanowires
- Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'
- Effect of impurities on the breaking of Au nanowires
- Adsorption and incorporation of Mn on Si(100)
- Microscopic picture of the single vacancy in germanium
- Adsorption of monomers on semiconductors and the importance of surface degrees of freedom
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