Silicon carbide clusters in silicon formed by carbon ions implantation (2003)
- Autores:
- Autor USP: ALVAREZ, INES PEREYRA DE - EP
- Unidade: EP
- Assunto: MICROELETRÔNICA
- Idioma: Inglês
- Imprenta:
- Editora: Electrochemical Society
- Local: Pennington
- Data de publicação: 2003
- ISBN: 1-56677-389-X
- Fonte:
- Título do periódico: Microelectronic Technology and Devices SBMicro 2003
-
ABNT
ESCOBAR FORHAN, Neisy Amparo e PEREYRA, Inés. Silicon carbide clusters in silicon formed by carbon ions implantation. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 20 abr. 2024. -
APA
Escobar Forhan, N. A., & Pereyra, I. (2003). Silicon carbide clusters in silicon formed by carbon ions implantation. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society. -
NLM
Escobar Forhan NA, Pereyra I. Silicon carbide clusters in silicon formed by carbon ions implantation. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 abr. 20 ] -
Vancouver
Escobar Forhan NA, Pereyra I. Silicon carbide clusters in silicon formed by carbon ions implantation. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2024 abr. 20 ] - One mask step a-Si:H/a-SiOxNy thin film transistor
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