A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor (2003)
- Autores:
- Autores USP: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assuntos: MATÉRIA CONDENSADA; MATERIAIS
- Idioma: Inglês
- Imprenta:
-
ABNT
SILVA, Antonio Jose Roque da e FAZZIO, Adalberto e ANTONELLI, Alex. A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor. . São Paulo: IFUSP. Disponível em: http://snsbf2.if.usp.br/PS_cache/cond-mat/pdf/0310/0310770.pdf. Acesso em: 19 abr. 2024. , 2003 -
APA
Silva, A. J. R. da, Fazzio, A., & Antonelli, A. (2003). A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor. São Paulo: IFUSP. Recuperado de http://snsbf2.if.usp.br/PS_cache/cond-mat/pdf/0310/0310770.pdf -
NLM
Silva AJR da, Fazzio A, Antonelli A. A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor [Internet]. 2003 ;[citado 2024 abr. 19 ] Available from: http://snsbf2.if.usp.br/PS_cache/cond-mat/pdf/0310/0310770.pdf -
Vancouver
Silva AJR da, Fazzio A, Antonelli A. A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor [Internet]. 2003 ;[citado 2024 abr. 19 ] Available from: http://snsbf2.if.usp.br/PS_cache/cond-mat/pdf/0310/0310770.pdf - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
- Ab initio study of an organic molecule interacting with a silicon-doped carbon nanotube
Como citar
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
