Photon and electron excitation of rare-earth doped amorphous SiN films (2003)
- Autores:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Assuntos: SEMICONDUTORES; FOTOLUMINESCÊNCIA; FILMES FINOS; TERRAS RARAS
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Abstract Book and Final Program
- Nome do evento: International Conference on Amorphous and Microcrystalline Semiconductors : Science and Technology - ICAMS
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ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, C. T. M. e JAHN, U. Photon and electron excitation of rare-earth doped amorphous SiN films. 2003, Anais.. Campinas: Instituto de Física de São Carlos, Universidade de São Paulo, 2003. . Acesso em: 18 abr. 2024. -
APA
Zanatta, A. R., Ribeiro, C. T. M., & Jahn, U. (2003). Photon and electron excitation of rare-earth doped amorphous SiN films. In Abstract Book and Final Program. Campinas: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Zanatta AR, Ribeiro CTM, Jahn U. Photon and electron excitation of rare-earth doped amorphous SiN films. Abstract Book and Final Program. 2003 ;[citado 2024 abr. 18 ] -
Vancouver
Zanatta AR, Ribeiro CTM, Jahn U. Photon and electron excitation of rare-earth doped amorphous SiN films. Abstract Book and Final Program. 2003 ;[citado 2024 abr. 18 ] - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
- Espectroscopia óptica de vidros fluoroindatos dopados com íons 'Er POT.3+' e 'Yb POT.3+'
- Optoelectronic properties of Er-doped amorphous GaAsN films
- AIN aloys prepared by reactive radio frequency sputtering
- Pulsed laser crystallization of SiGe alloys on GaAs
- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
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