Experimental and theoretical local structure of oxygen-rich amorphous silicon oxynitride (2003)
- Authors:
- USP affiliated authors: FANTINI, MARCIA CARVALHO DE ABREU - IF ; SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF ; ALVAREZ, INES PEREYRA DE - EP
- Unidades: IF; EP
- Subjects: SEMICONDUTORES; ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Book of Abstracts
- Conference titles: Brazilian Workshop on Semiconductor Physics
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ABNT
SCOPEL, Wanderla Luis et al. Experimental and theoretical local structure of oxygen-rich amorphous silicon oxynitride. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 19 abr. 2024. -
APA
Scopel, W. L., Fantini, M. C. de A., Prado, R. J., Orellana, W. M., Silva, A. J. R. da, Fazzio, A., & Pereyra, I. (2003). Experimental and theoretical local structure of oxygen-rich amorphous silicon oxynitride. In Book of Abstracts. Fortaleza: DF/UFC. -
NLM
Scopel WL, Fantini MC de A, Prado RJ, Orellana WM, Silva AJR da, Fazzio A, Pereyra I. Experimental and theoretical local structure of oxygen-rich amorphous silicon oxynitride. Book of Abstracts. 2003 ;[citado 2024 abr. 19 ] -
Vancouver
Scopel WL, Fantini MC de A, Prado RJ, Orellana WM, Silva AJR da, Fazzio A, Pereyra I. Experimental and theoretical local structure of oxygen-rich amorphous silicon oxynitride. Book of Abstracts. 2003 ;[citado 2024 abr. 19 ] - Theoretical and experimental studies of the atomic structure of oxygen-rich amorphous silicon oxynitride films
- Propriedades químicas e estruturais de óxido e oxi-nitreto de silício amorfo hidrogenado
- On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films
- Structural investigation of Si-rich amorphous silicon oxynitride films
- Study of the structural properties of the PECVD SiOxNy dielectric layers obtained with different RF powers by XANES and EXAFS analysis
- Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application
- Control of the refractive index in PECVD SiOxNy films
- SAXS de filmes finos homogêneos de a-SiC:H
- Structural and morphological investigation of amorphous hydrogenated silicon carbide
- Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H
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