Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' (2003)
- Authors:
- Autor USP: FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review B
- ISSN: 0163-1829
- Volume/Número/Paginação/Ano: v. 67, n. 20, p. 205317/1-205317, 2003
-
ABNT
MIWA, R H e VENEZUELA, P e FAZZIO, Adalberto. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, v. 67, n. 20, p. 205317/1-205317, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips. Acesso em: 19 abr. 2024. -
APA
Miwa, R. H., Venezuela, P., & Fazzio, A. (2003). Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, 67( 20), 205317/1-205317. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips -
NLM
Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2024 abr. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips -
Vancouver
Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2024 abr. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips - Spectral distribution of photoionization cross section of 'FE POT.2+' in inp: 'FE'
- Terras raras em gap
- Estrutura eletronica e geometrica dos clusters de 'GA IND.N' 'AS IND.M' (n,m = 1-3)
- Estrutura eletronica da microestrutura: 'GA IND.N' 'AS IND.M'
- Role played by n and n-n impurities in type-'IV' semiconductors
- Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7'
- Electronic structure of periodically 'SI'-'GAMA'-doped'GA''AS'
- Theoretical investigation of '3D POT.N' and '4D POT.N' impurities in gan
- Optical transitions in ruby across the corundum to 'Rh IND.2''O IND.3' (II) phase transformation
- Gap e 'GA''AS' dopados com 'V POT.2+': baixo spin x alto spin
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
