Oxifation at the 'Si/SiO IND.2' interface: influence of the spin degree of freedom (2003)
- Autores:
- Autores USP: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assuntos: SUPERFÍCIE FÍSICA; OXIDAÇÃO; ESTRUTURA ELETRÔNICA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Physical Review Letters
- ISSN: 0031-9007
- Volume/Número/Paginação/Ano: v. 90, n. 1, p. 016103/1-016103/4, 2003
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ABNT
ORELLANA, W e SILVA, Antonio Jose Roque da e FAZZIO, Adalberto. Oxifation at the 'Si/SiO IND.2' interface: influence of the spin degree of freedom. Physical Review Letters, v. 90, n. 1, p. 016103/1-016103/4, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000090000001016103000001&idtype=cvips. Acesso em: 28 mar. 2024. -
APA
Orellana, W., Silva, A. J. R. da, & Fazzio, A. (2003). Oxifation at the 'Si/SiO IND.2' interface: influence of the spin degree of freedom. Physical Review Letters, 90( 1), 016103/1-016103/4. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000090000001016103000001&idtype=cvips -
NLM
Orellana W, Silva AJR da, Fazzio A. Oxifation at the 'Si/SiO IND.2' interface: influence of the spin degree of freedom [Internet]. Physical Review Letters. 2003 ; 90( 1): 016103/1-016103/4.[citado 2024 mar. 28 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000090000001016103000001&idtype=cvips -
Vancouver
Orellana W, Silva AJR da, Fazzio A. Oxifation at the 'Si/SiO IND.2' interface: influence of the spin degree of freedom [Internet]. Physical Review Letters. 2003 ; 90( 1): 016103/1-016103/4.[citado 2024 mar. 28 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000090000001016103000001&idtype=cvips - Fe and Mn atoms interacting with carbon nanotubes
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