Ab initio calculations of vacancies in 'Si IND.X' 'Ge IND.1-X' (2002)
- Autores:
- Autores USP: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Assunto: ESTRUTURA ELETRÔNICA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Applied Physics Letters
- ISSN: 0003-6951
- Volume/Número/Paginação/Ano: v. 81, n. 8, p. 3383-3385, 2002
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ABNT
DALPIAN, G. M. et al. Ab initio calculations of vacancies in 'Si IND.X' 'Ge IND.1-X'. Applied Physics Letters, v. 81, n. 8, p. 3383-3385, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000018003383000001&idtype=cvips. Acesso em: 19 abr. 2024. -
APA
Dalpian, G. M., Venezuela, P., Silva, A. J. R. da, & Fazzio, A. (2002). Ab initio calculations of vacancies in 'Si IND.X' 'Ge IND.1-X'. Applied Physics Letters, 81( 8), 3383-3385. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000018003383000001&idtype=cvips -
NLM
Dalpian GM, Venezuela P, Silva AJR da, Fazzio A. Ab initio calculations of vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Applied Physics Letters. 2002 ; 81( 8): 3383-3385.[citado 2024 abr. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000018003383000001&idtype=cvips -
Vancouver
Dalpian GM, Venezuela P, Silva AJR da, Fazzio A. Ab initio calculations of vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Applied Physics Letters. 2002 ; 81( 8): 3383-3385.[citado 2024 abr. 19 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000081000018003383000001&idtype=cvips - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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