Si incorporation in Si(100) steps (2002)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- Subjects: SUPERFÍCIE FÍSICA; FILMES FINOS
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
DALPIAN, G. M. et al. Si incorporation in Si(100) steps. 2002, Anais.. São Paulo: SBF, 2002. . Acesso em: 18 abr. 2024. -
APA
Dalpian, G. M., Silva, A. J. R. da, Venezuela, P., & Fazzio, A. (2002). Si incorporation in Si(100) steps. In Resumos. São Paulo: SBF. -
NLM
Dalpian GM, Silva AJR da, Venezuela P, Fazzio A. Si incorporation in Si(100) steps. Resumos. 2002 ;[citado 2024 abr. 18 ] -
Vancouver
Dalpian GM, Silva AJR da, Venezuela P, Fazzio A. Si incorporation in Si(100) steps. Resumos. 2002 ;[citado 2024 abr. 18 ] - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
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