Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates (2002)
- Autores:
- Autores USP: QUIVY, ALAIN ANDRE - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assuntos: SUPERFÍCIE FÍSICA; FOTOLUMINESCÊNCIA
- Idioma: Inglês
- Imprenta:
- Fonte:
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ABNT
SALES, F V de et al. Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates. Physica B, v. 311, n. 3-4, p. 285-291, 2002Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5535&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=c87e532260cd3006cc6ac12632aed54b. Acesso em: 23 abr. 2024. -
APA
Sales, F. V. de, Soler, M. A. G., Ugarte, D., Abramof, E., Quivy, A. A., Silva, S. W. da, et al. (2002). Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates. Physica B, 311( 3-4), 285-291. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5535&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=c87e532260cd3006cc6ac12632aed54b -
NLM
Sales FV de, Soler MAG, Ugarte D, Abramof E, Quivy AA, Silva SW da, Martini S, Moraes PC, Leite JR. Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates [Internet]. Physica B. 2002 ; 311( 3-4): 285-291.[citado 2024 abr. 23 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5535&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=c87e532260cd3006cc6ac12632aed54b -
Vancouver
Sales FV de, Soler MAG, Ugarte D, Abramof E, Quivy AA, Silva SW da, Martini S, Moraes PC, Leite JR. Investigation of optical and structural properties of 'In IND.X' Ga IND.1-X' As/GaAs quantum wells grown on vicinal GaAs(001) substrates [Internet]. Physica B. 2002 ; 311( 3-4): 285-291.[citado 2024 abr. 23 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5535&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=c87e532260cd3006cc6ac12632aed54b - Optical characterization of GaAs/AlAs multiple quantum wells interfaces
- Fônons de borda da zona de brillouin induzidos em espalhamento raman por defeito local
- Growth of selg-organized InGaAs islands by molecular beam epitaxy
- Optically determined carrier transport in InGaAs-GaAs quantum wells
- Coupled rate equation modeling of self-assembled quantum dot photoluminescence
- Carrier kinetics in quantum dots through continuos wave photoluminescence modeling: a systematic study on a sample with surface dot density gradient
- Photoexcited carrier diffusion in self-assembled InAs/GaAs quantum dots with different dot densities
- Pocos quanticos de i 'N IND.0,15' 'GA IND.0,85' 'AS' / 'GA''AS' com dopagem planar de 'SI' no centro
- Spatial confinement of self-organized MBE-growth 'In IND.x''Ga IND.1-X' As quantum dots
- Estudo da difusão de portadores em poços quânticos de InGaAs/GaAs crescidos sobre substratos vicinais de GaAs (001)
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