Electronic and optical properties of p-doped hexagonal nitrides (2002)
- Autores:
- Autores USP: SIPAHI, GUILHERME MATOS - IFSC ; SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidades: IFSC; IF
- Assuntos: FÍSICA DA MATÉRIA CONDENSADA; SEMICONDUTORES
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Resumos
- Nome do evento: Encontro Nacional de Física da Matéria Condensada
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ABNT
RODRIGUES, S. C. P. et al. Electronic and optical properties of p-doped hexagonal nitrides. 2002, Anais.. São Paulo: SBF, 2002. . Acesso em: 19 abr. 2024. -
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2002). Electronic and optical properties of p-doped hexagonal nitrides. In Resumos. São Paulo: SBF. -
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Electronic and optical properties of p-doped hexagonal nitrides. Resumos. 2002 ;[citado 2024 abr. 19 ] -
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Electronic and optical properties of p-doped hexagonal nitrides. Resumos. 2002 ;[citado 2024 abr. 19 ] - Controlling the charge and the spin polarization distributions in (In,Ga,Mn)As-based diluted magnetic semiconductor multilayered structures
- Luminescence spectra in metallic and ferromagnetic GaMnAs/GaAs multilayers: a self-consistent super-cell Kane K.p calculation
- (Ga, Mn)N-based ferromagnetic superlattices: eletronic properties
- Electronic properties of GaAs/Ga'As IND.1-x''N IND.x' multiple quantum wells
- Electronic properties of GaMnAs diluted magnetic semiconductors
- Luminescence spectra in metallic and ferromagnetic GaMnAs/GaAs multilayers: a self-consistent super-cell Luttinger Kohn k. p calculation
- Theoretical luminescence spectra determination in GaAsN/GaAs quantum wells
- Optical characterization of cubic AlGaN/GaN quantum wells
- Calculated luminescence spectra of GaAs/Ga'As IND.1-x''N IND.x' derived heterostructures
- Exchange-correlation effects on the valence band structure of cubic AlGaN/GaN and GaN/InGaN superlattices
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