Stability investigation and thermal behavior of a hypothetical silicon nanotube (2001)
- Authors:
- USP affiliated authors: SILVA, ANTONIO JOSE ROQUE DA - IF ; FAZZIO, ADALBERTO - IF
- Unidade: IF
- DOI: 10.1016/s0166-1280(00)00777-6
- Subjects: ESTRUTURA ELETRÔNICA; MÉTODO DE MONTE CARLO
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Molecular Structure-Theochem
- ISSN: 0166-1280
- Volume/Número/Paginação/Ano: v. 539, p. 101-106, 2001
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
FAGAN, Solange Binotto et al. Stability investigation and thermal behavior of a hypothetical silicon nanotube. Journal of Molecular Structure-Theochem, v. 539, p. 101-106, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0166-1280(00)00777-6. Acesso em: 19 abr. 2024. -
APA
Fagan, S. B., Mota, R., Baierle, R. J., Paiva, C., Silva, A. J. R. da, & Fazzio, A. (2001). Stability investigation and thermal behavior of a hypothetical silicon nanotube. Journal of Molecular Structure-Theochem, 539, 101-106. doi:10.1016/s0166-1280(00)00777-6 -
NLM
Fagan SB, Mota R, Baierle RJ, Paiva C, Silva AJR da, Fazzio A. Stability investigation and thermal behavior of a hypothetical silicon nanotube [Internet]. Journal of Molecular Structure-Theochem. 2001 ; 539 101-106.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/s0166-1280(00)00777-6 -
Vancouver
Fagan SB, Mota R, Baierle RJ, Paiva C, Silva AJR da, Fazzio A. Stability investigation and thermal behavior of a hypothetical silicon nanotube [Internet]. Journal of Molecular Structure-Theochem. 2001 ; 539 101-106.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1016/s0166-1280(00)00777-6 - Vacancy-mediated diffusion in disordered alloys: Ge self-diffusion in 'Si IND.1-X' 'Ge IND.X'
- Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
- Eletronic and structural properties of 'C IND. 59'Si on a hydrogenated Si(100) surface
- A possible route to grow a (Mn:'Si IND. (1-x)'Ge IND. x')-based diluted magnetic semiconductor
- Adsoption of gold on carbon nanotubes
- Computer simulations of gold nanowires
- Ab initio study of an iron atom interacting with single-wall carbon nanotubes
- Electronic and magnetic properties of iron chains on carbon nanotubes
- Adsorption and incorporation of Mn on Si(100)
- Effect of impurities in the breaking of gold nanowires
Informações sobre o DOI: 10.1016/s0166-1280(00)00777-6 (Fonte: oaDOI API)
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