Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy (2001)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- DOI: 10.1002/jrs.774
- Subjects: ESPECTROSCOPIA RAMAN; SUPERFÍCIE FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Raman Spectroscopy
- ISSN: 0377-0486
- Volume/Número/Paginação/Ano: v. 32, p. 857-861, 2001
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
ZANELATO, G et al. Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy. Journal of Raman Spectroscopy, v. 32, p. 857-861, 2001Tradução . . Disponível em: https://doi.org/10.1002/jrs.774. Acesso em: 19 abr. 2024. -
APA
Zanelato, G., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., & González-Borrero, P. P. (2001). Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy. Journal of Raman Spectroscopy, 32, 857-861. doi:10.1002/jrs.774 -
NLM
Zanelato G, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP. Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy [Internet]. Journal of Raman Spectroscopy. 2001 ; 32 857-861.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1002/jrs.774 -
Vancouver
Zanelato G, Pusep YA, Galzerani JC, Lubyshev DI, González-Borrero PP. Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy [Internet]. Journal of Raman Spectroscopy. 2001 ; 32 857-861.[citado 2024 abr. 19 ] Available from: https://doi.org/10.1002/jrs.774 - Transition from localized to extended states below the Fermi level in GaAs/AlGaAs multiple quantum well heterostructures
- Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
- Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As
- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Coherency of elementary excitations in disordered electron system
- Miniband effects in short-period InGaAs/InP superlattices
- Coherence of elementary excitations in disordered electron systems
- Conduction mechanisms in GaAs nanowire photovoltaics
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- Circularly polarized photoluminescence of GaAs/AlGaAs quantum hall bilayers
Informações sobre o DOI: 10.1002/jrs.774 (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 | PROD007521_1208929.pdf |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
