A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs (2000)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: IEEE/SBC
- Publisher place: Piscataway
- Date published: 2000
- Source:
- Título do periódico: LATW 00: proceedings
- Conference titles: IEEE Latin American Test Workshop
-
ABNT
NICOLETT, Aparecido Sirley et al. A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. 2000, Anais.. Piscataway: IEEE/SBC, 2000. . Acesso em: 20 abr. 2024. -
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. In LATW 00: proceedings. Piscataway: IEEE/SBC. -
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2024 abr. 20 ] -
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs. LATW 00: proceedings. 2000 ;[citado 2024 abr. 20 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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