Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping (2000)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: MATÉRIA CONDENSADA; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: The Institute of Pure and Applied Physics-IPAP
- Publisher place: Tokyo
- Date published: 2000
- Source:
- Título do periódico: Proceedings
- Conference titles: International Workshop on Nitride Semiconductors
-
ABNT
RODRIGUES, S C P et al. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. 2000, Anais.. Tokyo: The Institute of Pure and Applied Physics-IPAP, 2000. . Acesso em: 24 abr. 2024. -
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2000). Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. In Proceedings. Tokyo: The Institute of Pure and Applied Physics-IPAP. -
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. Proceedings. 2000 ;[citado 2024 abr. 24 ] -
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Cubic AlGaN/GaN and GaN/InGaN heterostructures: effects of p-type doping. Proceedings. 2000 ;[citado 2024 abr. 24 ] - Density functional theory for holes in semiconductors - replay
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