Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures (2000)
- Authors:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Publisher: SBMicro/UA/UFRGS/UNICAMP/USP
- Publisher place: Manaus
- Date published: 2000
- Source:
- Título do periódico: SBMicro 2000: proceedings
- Conference titles: International Conference on Microelectronics and Packaging
-
ABNT
BELLODI, Marcello et al. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 19 abr. 2024. -
APA
Bellodi, M., Iniguez, B., Raynaud, C., Flandre, D., & Martino, J. A. (2000). Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP. -
NLM
Bellodi M, Iniguez B, Raynaud C, Flandre D, Martino JA. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. SBMicro 2000: proceedings. 2000 ;[citado 2024 abr. 19 ] -
Vancouver
Bellodi M, Iniguez B, Raynaud C, Flandre D, Martino JA. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. SBMicro 2000: proceedings. 2000 ;[citado 2024 abr. 19 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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