Extraction of the oxide charges at the buried oxide/silicon substrate interface in accumulation-mode SOI pMOSFET's at low temperature (1999)
- Autores:
- Autor USP: MARTINO, JOÃO ANTONIO - EP
- Unidade: EP
- Assunto: ELETROQUÍMICA
- Idioma: Inglês
- Imprenta:
- Local: Pennington
- Data de publicação: 1999
- Fonte:
- Título do periódico: Electrochemical Society Proceedings
- ISSN: 0161-6374
- Volume/Número/Paginação/Ano: v. 99-3, p. 201-206, 1999
- Nome do evento: International Symposium on Silicon-on-Insulator Technology and Devices
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Extraction of the oxide charges at the buried oxide/silicon substrate interface in accumulation-mode SOI pMOSFET's at low temperature. Electrochemical Society Proceedings. Pennington: Escola Politécnica, Universidade de São Paulo. . Acesso em: 25 abr. 2024. , 1999 -
APA
Pavanello, M. A., & Martino, J. A. (1999). Extraction of the oxide charges at the buried oxide/silicon substrate interface in accumulation-mode SOI pMOSFET's at low temperature. Electrochemical Society Proceedings. Pennington: Escola Politécnica, Universidade de São Paulo. -
NLM
Pavanello MA, Martino JA. Extraction of the oxide charges at the buried oxide/silicon substrate interface in accumulation-mode SOI pMOSFET's at low temperature. Electrochemical Society Proceedings. 1999 ; 99-3 201-206.[citado 2024 abr. 25 ] -
Vancouver
Pavanello MA, Martino JA. Extraction of the oxide charges at the buried oxide/silicon substrate interface in accumulation-mode SOI pMOSFET's at low temperature. Electrochemical Society Proceedings. 1999 ; 99-3 201-206.[citado 2024 abr. 25 ] - Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs
- Projeto de processos de fabricação avançados aplicáveis nas tecnologias CMOS micrométricas
- Analysis of the linear kink effect in partially depleted SOI nMOSFETs
- Simple method to extract the length dependent mobility degradation factor at 77 K
- Mobility degradation influence on the SOI MOSFET channel length extraction at 77K
- Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
- Analysis of the capacitance vs. voltage in graded channel SOI capacitor
- A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction
- Metodo simples para a obtencao da densidade de armadilhas na primeira e segunda interface em soi-mosfet
- Simple method for the determination of the interface trap density at 77k in fully depleted acumulation mode soi mosfets
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