p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant (1999)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- DOI: 10.1016/s0022-0248(99)00325-5
- Assunto: CRISTALOGRAFIA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal Crystal Growth
- Volume/Número/Paginação/Ano: v. 206, n. 3, p. 171-176, 1999
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
QUIVY, A. A. et al. p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant. Journal Crystal Growth, v. 206, n. 3, p. 171-176, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(99)00325-5. Acesso em: 25 abr. 2024. -
APA
Quivy, A. A., Sperandio, A. L., Silva, E. C. F. da, & Leite, J. R. (1999). p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant. Journal Crystal Growth, 206( 3), 171-176. doi:10.1016/s0022-0248(99)00325-5 -
NLM
Quivy AA, Sperandio AL, Silva ECF da, Leite JR. p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant [Internet]. Journal Crystal Growth. 1999 ; 206( 3): 171-176.[citado 2024 abr. 25 ] Available from: https://doi.org/10.1016/s0022-0248(99)00325-5 -
Vancouver
Quivy AA, Sperandio AL, Silva ECF da, Leite JR. p-type doping of GaAs(001) layers grown by MBE using silicon as a dopant [Internet]. Journal Crystal Growth. 1999 ; 206( 3): 171-176.[citado 2024 abr. 25 ] Available from: https://doi.org/10.1016/s0022-0248(99)00325-5 - Effects of thermally activated hole escape mechanism on the optical and electrical properties in 'ro'-type Si 'delta'-doped GaAs(311)A layers
- Illumination as a tool to investigate the quantum mobility of the two-dimensional electron gas in a Si 'delta'-doped GaAs/'In IND.0.15' 'Ga IND.0.85'As/GaAs quantum well
- Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
- Optical response at 1.3 'mu'm and 1.5 'mu'm with InAs quantum dots embedded in a pure GaAs matrix
- Concentration dependence of Si-doped GaAs layers grown by moleucular beam epitaxy on (311) A substrates
- InAs/GaAs quantum dots optically active at 1.5 'mu'
- H-band emission in single heterojunctions
- 'p-type''Si-Doped' Structures Grown By Molecular Beam Epitaxy on '(311)'A 'GaAs' Substrates
- Study of the 2-dimensional to 3-dimensional transition in p-type multiple-delta-doped GaAs layers grown on top of (311)A GaAs substrates
- Large InAs/GaAs quantum dots optically active in the long-wavelength region
Informações sobre o DOI: 10.1016/s0022-0248(99)00325-5 (Fonte: oaDOI API)
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