Temperature effects on the optical properties of InGaAs/GaAs single quantum wells grown on high index GaAs substrates with non-abrupt interfaces (1998)
- Autores:
- Autores USP: BASMAJI, PIERRE - IFSC ; GUIMARAES, FRANCISCO EDUARDO GONTIJO - IFSC
- Unidade: IFSC
- Assuntos: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Editora: Sociedade Brasileira de Física
- Local: São Paulo
- Data de publicação: 1998
- Fonte:
- Título do periódico: Resumos
- Nome do evento: Encontro Nacional de Física da Matéria Condensada
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ABNT
FREIRE, Sergio L S et al. Temperature effects on the optical properties of InGaAs/GaAs single quantum wells grown on high index GaAs substrates with non-abrupt interfaces. 1998, Anais.. São Paulo: Sociedade Brasileira de Física, 1998. . Acesso em: 16 abr. 2024. -
APA
Freire, S. L. S., Lúcio, A. D., Cury, L. A., Guimarães, F. E. G., Gonzales-Borrero, P. P., & Basmaji, P. (1998). Temperature effects on the optical properties of InGaAs/GaAs single quantum wells grown on high index GaAs substrates with non-abrupt interfaces. In Resumos. São Paulo: Sociedade Brasileira de Física. -
NLM
Freire SLS, Lúcio AD, Cury LA, Guimarães FEG, Gonzales-Borrero PP, Basmaji P. Temperature effects on the optical properties of InGaAs/GaAs single quantum wells grown on high index GaAs substrates with non-abrupt interfaces. Resumos. 1998 ;[citado 2024 abr. 16 ] -
Vancouver
Freire SLS, Lúcio AD, Cury LA, Guimarães FEG, Gonzales-Borrero PP, Basmaji P. Temperature effects on the optical properties of InGaAs/GaAs single quantum wells grown on high index GaAs substrates with non-abrupt interfaces. Resumos. 1998 ;[citado 2024 abr. 16 ] - Optical anisotropy in (311) 'IN''GA''AS' / 'GA''AS' quantum wells
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Influence of surface structure on surface segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Luminescence centers in porous silicon
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Influence of surface structure on segregation and alloy properties in (100)- and (311)- oriented 'IN''GA''AS' / 'GA''AS' heterostructures
- Optical anisotropy in (311) 'IN IND.1-X''GA IND.X''AS' / 'GA''AS' quantum wells
- Influence of surface structure on segregation and alloy quality in (100) and (311) oriented InGaAs/GaAs heterostructures
- Propriedades oticas de heteroestruturas semicondutoras de 'IN''GA''AS' / 'GA''AS' crescidas nas direcoes [100] e [311]
- Influence of surface structure on segregation and alloy properties in (100)- and (311)-oriented 'IN''GA''AS' / 'GA''AS' heterostructures
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