Characteristic of silicon etching process in a RIE reactor modified to include a built-in radio frequency excitation coil. (em CD-Rom) (1997)
- Autores:
- Autores USP: MACIEL, HOMERO SANTIAGO - EP ; VERDONCK, PATRICK BERNARD - EP ; MANSANO, RONALDO DOMINGUES - EP
- Unidade: EP
- Assuntos: CIRCUITOS INTEGRADOS; SEMICONDUTORES
- Idioma: Inglês
- Imprenta:
- Editora: SBMICRO/EFEI
- Local: Itajubá
- Data de publicação: 1997
- Fonte:
- Título do periódico: Proceedings
- Nome do evento: Conference of the Brazilian Microelectronics Society
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ABNT
MASSI, Marcos et al. Characteristic of silicon etching process in a RIE reactor modified to include a built-in radio frequency excitation coil. (em CD-Rom). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 19 abr. 2024. -
APA
Massi, M., Mansano, R. D., Maciel, H. S., & Verdonck, P. B. (1997). Characteristic of silicon etching process in a RIE reactor modified to include a built-in radio frequency excitation coil. (em CD-Rom). In Proceedings. Itajubá: SBMICRO/EFEI. -
NLM
Massi M, Mansano RD, Maciel HS, Verdonck PB. Characteristic of silicon etching process in a RIE reactor modified to include a built-in radio frequency excitation coil. (em CD-Rom). Proceedings. 1997 ;[citado 2024 abr. 19 ] -
Vancouver
Massi M, Mansano RD, Maciel HS, Verdonck PB. Characteristic of silicon etching process in a RIE reactor modified to include a built-in radio frequency excitation coil. (em CD-Rom). Proceedings. 1997 ;[citado 2024 abr. 19 ] - Characterization of mode transitions for RF discharges in different gases
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- Electrical and structural characterisation of DLC films deposited by magnetron sputtering
- Silicon wall profiles generated by isotropic dry etching process
- A comparative study of single and double langmuir probe techniques for RF plasma characterization
- Silicon surface roughness induced by SF6-based reactive ion etching process for micromachining applications
- Performance characterization of an RIE reactor with built-in RF excitation antenna
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