Corrugation of the (311) a interface found by raman scaterring in 'GA''AS' / 'AL''AS' superlattices (1995)
- Autores:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assuntos: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS); MATÉRIA CONDENSADA
- Idioma: Inglês
- Imprenta:
- Fonte:
- Título do periódico: Scientific Program and Abstracts
- Nome do evento: Simposio Latino-Americano de Fisica do Estado Solido
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ABNT
SILVA, S W et al. Corrugation of the (311) a interface found by raman scaterring in 'GA''AS' / 'AL''AS' superlattices. 1995, Anais.. Gramado: Ufrgs, 1995. . Acesso em: 24 abr. 2024. -
APA
Silva, S. W., Pusep, Y. A., Galzerani, J. C., Lubyshev, D. I., & Basmaji, P. (1995). Corrugation of the (311) a interface found by raman scaterring in 'GA''AS' / 'AL''AS' superlattices. In Scientific Program and Abstracts. Gramado: Ufrgs. -
NLM
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, Basmaji P. Corrugation of the (311) a interface found by raman scaterring in 'GA''AS' / 'AL''AS' superlattices. Scientific Program and Abstracts. 1995 ;[citado 2024 abr. 24 ] -
Vancouver
Silva SW, Pusep YA, Galzerani JC, Lubyshev DI, Basmaji P. Corrugation of the (311) a interface found by raman scaterring in 'GA''AS' / 'AL''AS' superlattices. Scientific Program and Abstracts. 1995 ;[citado 2024 abr. 24 ] - Heteroestruturas 'AL''GA''AS' / 'GA''AS' com mobilidade 390 x'10 POT.3''CENTIMETROS QUADRADOS' / v.S crescidas por mbe
- 'IN''AS' wire crystals grown by molecular beam epitaxy on porous 'SI'
- Centro dx em estruturas 'AL IND.X''GA IND.1-X''AS' altamente dopada com selenio
- Centro dx em 'AL IND.X''GA IND.1-X''AS': 'SE'
- Medidas de fotoreflectancia em 'DELTA'-doping
- Photoreflectance of 2-d electron gas: observation of quantum franz-keldysh effect?
- Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy
- Espectroscopia de tunelamento em sistemas delta-doping
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Magnetic-field-tuned impurity level in a mesoscopic 'AL IND.X''GA IND.1-X''AS' / 'GA''AS' antidot sample
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